文章资讯
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- 2015-04-14 Bend-it e-books get real with EPD in factory mode
- LG Display has set the production clock ticking for a plastic EPD (electronic paper display) product which in turn is expected to set e-book marketability fast-forward. In an announcement Thursday, Korea-based LG Display, which manufactures thin film transistor liquid crystal display, said it has already started up mass production of EPD for e-books. That leaves little guesswork as to the form factor and no suspicions that LG Display might instead be sending out vapor about a futuristic project that is still in R&D.
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- 2015-04-14 Multiple groups claim to create first atom-thick silicon sheets
- Since its discovery in 2004, graphene -- sheets of carbon an atom thick -- has sparked a flurry of research into the nanomaterial's potential applications for blazing fast, tiny electronics. Now, several research groups claim to have created analogous thin sheets of silicon called silicene, igniting a controversy over who won the race to synthesize this promising new material.
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- 2015-04-14 Polarized X-ray scattering technique reveals structure of printable electronics
- An innovative X-ray technique has given North Carolina State University researchers and their collaborators new insight into how organic polymers can be used in printable electronics such as transistors and solar cells. Their discoveries may lead to cheaper, more efficient printable electronic devices.
Printable electronics are created by spraying or printing inks containing conductive organic molecules onto a surface. The process is fast and much less expensive than current production techniques for items like solar cells or computer and television displays. Additionally, it holds potential for amazing new applications: picture a wearable interactive display that needs no batteries. - See Details
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- 2015-04-14 Ultra-sensitive electrical biosensor unlocks potential for instant diagnostic devices
- A new quantum mechanical-based biosensor designed by a team at University of California, Santa Barbara offers tremendous potential for detecting biomolecules at ultra-low concentrations, from instant point-of-care disease diagnostics, to detection of trace substances for forensics and security.
Kaustav Banerjee, director of the Nanoelectronics Research Lab and professor of Electrical and Computer Engineering at UCSB, and PhD student Deblina Sarkar have have proposed a methodology for beating the fundamental limits of a conventional Field-Effect-Transistor (FET) by designing a Tunnel-FET (T-FET) sensor that is faster and four orders of magnitude more sensitive. - See Details
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- 2015-04-14 Researchers develop technique to keep cool high-power semiconductor devices used in wireless applications, electric cars
- A group of researchers at the University of California, Riverside Bourns College of Engineering have developed a technique to keep cool a semiconductor material used in everything from traffic lights to electric cars.
Gallium Nitride (GaN), a semiconductor material utilized in bright lights since the 1990s, is used in wireless applications due to its high efficiency and high voltage operation. However, the applications and market share of GaN electronics is limited because it is difficult to remove heat from them. - See Details
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- 2015-04-14 Full control of plastic transistors
- In an article in the highly ranked interdisciplinary journal PNAS, Loïg Kergoat, a researcher at Linköping University, describes how transistors made of plastic can be controlled with great precision.
The Organic Electronics Research Group at Linköping University (LiU) in Sweden, led by Professor Magnus Berggren, attracted great attention a year ago when Lars Herlogsson showed in his doctoral thesis that it was possible to construct fully functional field-effect transistors out of plastic. - See Details
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- 2015-04-13 NLT announces naked-eye display with better 3-D view
- NLT Technologies has announced its development of an autostereoscopic multiview display based on the success of its HxDP technology. HxDP stands for Horizontally x times Density Pixels. The company reports impressive end results as improvements in 3-D and 2-D viewing. NLT Technologies together with its sales and marketing channels in the Americas and Europe, Renesas Electronics America and Renesas Electronics Europe GmbH, announced the autostereoscopic multi-view high resolution display earlier this week.
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- 2015-04-13 Samsung presents a new graphene device structure
- Samsung Advanced Institute of Technology, the core R&D incubator for Samsung Electronics, has developed a new transistor structure utilizing graphene.
As published online in the journal Science on Thursday, 17th May, this research is regarded to have brought us one step closer to the development of transistors that can overcome the limits of conventional silicon. - See Details
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- 2015-04-13 Graphene on boron nitride work may lead to breakthrough in microchip technology
- Graphene is the wonder material that could solve the problem of making ever faster computers and smaller mobile devices when current silicon microchip technology hits an inevitable wall. Graphene, a single layer of carbon atoms in a tight hexagonal arrangement, has been highly researched because of its incredible electronic properties, with theoretical speeds 100 times greater than silicon. But putting the material into a microchip that could outperform current silicon technology has proven difficult.
The answer may lie in new nanoscale systems based on ultrathin layers of materials with exotic properties. Called two-dimensional layered materials, these systems could be important for microelectronics, various types of hypersensitive sensors, catalysis, tissue engineering and energy storage. - See Details
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- 2015-04-13 LG Display will release HD panel for smartphones
- LG Display is getting ready to showcase a five-inch smartphone display that turns out to be a full HD LCD panel supporting up to 1080p video, something like having a high-quality TV in your hand. The display will allow smartphone users to view full HD content with ideal viewing as seen on TVs and monitors and will set a high bar for other manufacturers as a result. The Seoul, Korea-based company has announced the new display with 1920x1080 resolution and impressive pixel density of 440ppi.
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- 2015-04-13 The first chemical circuit developed
- Klas Tybrandt, doctoral student in organic electronics at Linkoping University, Sweden, has developed an integrated chemical chip. The results have just been published in Nature Communications.
The Organic Electronics research group at Linköping University previously developed ion transistors for transport of both positive and negative ions, as well as biomolecules. Tybrandt has now succeeded in combining both transistor types into complementary circuits, in a similar way to traditional silicon-based electronics. - See Details
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- 2015-04-13 Research group creates bendable electronics that hold up under abuse
- A team made up of researchers from the Korean Gwangju Institute of Science and Technology, Seoul University and Rice University in the United States have created a flexible test substrate with embedded single molecule thick electronic components that is able to withstand torturous contortions that would destroy any other electronic devices. The team, as they write in their paper published in Nature Nanotechnology, believe their tests show that flexible devices can be made using single-molecule thick electronic components.
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- 2015-04-13 Plasma startup creates high-energy light to make smaller microchips
- A University of Washington lab has been working for more than a decade on fusion energy, harnessing the energy-generating mechanism of the sun. But in one of the twists of scientific discovery, on the way the researchers found a potential solution to a looming problem in the electronics industry.
To bring their solution to market two UW engineers have launched a startup, Zplasma, that aims to produce the high-energy light needed to etch the next generation of microchips. - See Details
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- 2015-04-13 Nanoscientists suggest use of vacuums to overcome limits of conventional silicon-based semiconductor electronics
- With the advent of semiconductor transistors—invented in 1947 as a replacement for bulky and inefficient vacuum tubes—has come the consistent demand for faster, more energy-efficient technologies. To fill this need, researchers at the University of Pittsburgh are proposing a new spin on an old method: a switch from the use of silicon electronics back to vacuums as a medium for electron transport—exhibiting a significant paradigm shift in electronics. Their findings were published online in Nature Nanotechnology July 1.
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- 2015-04-13 Researchers devise scalable method for fabricating high-quality graphene transistors
- Graphene, a one-atom-thick layer of graphitic carbon, has attracted a great deal of attention for its potential use as a transistor that could make consumer electronic devices faster and smaller.
But the material's unique properties, and the shrinking scale of electronics, also make graphene difficult to fabricate on a large scale. The production of high-performance graphene using conventional fabrication techniques often leads to damage to the graphene lattice's shape and performance, resulting in problems that include parasitic capacitance and serial resistance. - See Details
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- 2015-04-13 Carbon-based transistors ramp up speed and memory for mobile devices
- Though smartphones and tablets are hailed as the hardware of the future, their present-day incarnations have some flaws. Most notoriously, low RAM memory limits the number of applications that can be run at one time and quickly consumes battery power. Now, a Tel Aviv University researcher has found a creative solution to these well-known problems.
As silicon technology gets smaller, creating a large and powerful memory grows harder, say PhD candidate Elad Mentovich and his supervisor Dr. Shachar Richter of TAU's Department of Chemistry and Center for Nanoscience and Nanotechnology. Working with carbon molecules called C60, Mentovich has successfully built a sophisticated memory transistor that can both transfer and store energy, eliminating the need for a capacitor. - See Details
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- 2015-04-11 Researchers devise a way to a create graphene transistor
- Researchers in Germany appear to have found a way to create a monolithic (integrated) graphene transistor, using a lithographic process applied to silicon carbide, a breakthrough that could lead to computers based on graphene chips, rather than those that use silicon. This is significant because researchers are beginning to see the light at the end of the tunnel regarding the degree to which silicon can be used to make smaller and smaller chips.
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- 2015-04-11 New hybrid material simplifies organic transistor design
- Organic transistors serve as a key component of new flexible, low-cost electronics. Since the organic materials that make up these transistors are what give the transistors their ability to switch and amplify signals, scientists spend a great deal of effort searching for organic materials with highly tunable electronic properties. In some cases, this research involves blending multiple materials together.
In one of the most recent studies in this area, researchers have blended twomolecular components together to fabricate a hybrid material whose electronic properties can be switched between two energy states when illuminated by light of different wavelengths. - See Details
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- 2015-04-11 Researchers create working Mott transistor prototype
- Engineers from several research organizations working together in Japan have developed a working prototype of a Mott transistor, a possible alternative to the standard silicon based field-effect transistor (FET). The prototype, as the team describes in their paper published in the journal Nature, used a new type of material, called a Mott insulator that changes from a resistor to a metal when an electric charge is introduced.
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- 2015-04-11 Physics team devises a way to make first undoped silicon nanowire gate
- A team of French physicists working out of Universite Joseph Fourier, France, has found a way to create logic gates, transistors and diodes from silicon nanowires without having to resort to dopants (inserting another material into the original to change its electrical or optical properties). Their process, which they explain in the paper they’ve written and uploaded to the preprint server arXiv, involves applying a very thin layer of silicates at the juncture of metal and nanowires.
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- 2015-04-11 US seeks $1 bn, prison for Taiwan execs in LCD case
- Prosecutors asked for a $1 billion fine for Taiwan's AU Optronics and prison terms of 10 years for two top executives in the "most serious price-fixing" case in US history, court documents showed Wednesday.
According to a US government sentencing recommendation filed in federal court, "only these sentences could possibly reflect the seriousness of this offense or provide adequate deterrence."
The US Justice Department asked for the massive fine to be levied against Taiwan's largest maker of displays for computers, smartphones and other gadgets, for its conviction in a price-fixing scheme for LCD display panels. - See Details
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- 2015-04-11 NRL demonstrates high durability of nanotube transistors to harsh space environment
- U.S. Naval Research Laboratory electronics science and technology engineers demonstrate the ability of single walled carbon nanotube transistors (SWCNTs) to survive the harsh space environment, investigating the effects of ionizing radiation on the crystalline structures and further supporting the development of SWCNT-based nanoelectronics for use in harsh radiation environments.
"One of the primary challenges for space electronics is mitigating the susceptibility of prolonged exposure to radiation that exists in the charged particle belts that encircle Earth," said Cory Cress, materials research engineer. "These are the first controlled demonstrations showing little performance degradation and high tolerance to cumulative ionizing radiation exposure." - See Details
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- 2015-04-11 Single-atom writer a landmark for quantum computing
- A research team led by Australian engineers has created the first working quantum bit based on a single atom in silicon, opening the way to ultra-powerful quantum computers of the future.
In a landmark paper published today in the journal Nature, the team describes how it was able to both read and write information using the spin, or magnetic orientation, of an electron bound to a single phosphorus atom embedded in a silicon chip. - See Details
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- 2015-04-11 Taiwan's AUO to appeal over US price-fixing fine
- Taiwan's AU Optronics said Friday it would appeal against a US court decision to fine it $500 million for taking part in what prosecutors called the "most serious price-fixing" case in US history.
A US district court judge imposed the fine—which matches the largest imposed for violating US antitrust laws—and sentenced two former executives, including a one-time president, to three years jail.
"The company regrets the ruling and intends to file an appeal," Taiwan's largest LCD maker said in a statement, responding to the fine, imposed for rigging prices of displays for smartphones, computers and other gadgets. - See Details
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- 2015-04-11 Silicon nanowires under extreme tensile strain may lead to more efficient transistors
- Stretching a layer of silicon can build up internal mechanical strain which can considerably improve its electronic properties. With strained silicon, one can, for example, build faster and less power-consuming microprocessors.
Researchers at the Paul Scherrer Institute and the ETH Zurich have developed a method which allows them to produce 30-nanometer-thick highly strained wires in a silicon layer. This strain is the highest that has ever been observed in a material which can serve as the basis for electronic components. The aim is to produce high-performance and low-power transistors for microprocessors based on such wires. - See Details
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- 2015-04-11 NRI to lead new five-year effort to develop post-CMOS electronics
- The National Institute of Standards and Technology (NIST) announced today the selection of the Nanoelectronics Research Initiative (NRI), a collaboration of several key firms in the semiconductor industry, to support university-centered research for the development of after-the-next-generation "nanoelectronics" technology. NRI is made up of participants from the semiconductor industry, including GLOBALFOUNDRIES, IBM, Intel, Micron Technology and Texas Instruments.
"The NRI is a model for industry-driven consortia," said NIST Director Patrick Gallagher. "It funds a highly leveraged, coordinated nanoelectronics research program centered at leading universities in partnership with federal and state government agencies. The innovation stemming from this NIST award will enable the United States to keep our current leadership in nanoelectronics that stimulates the economy and creates high-paying jobs." - See Details
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- 2015-04-10 Researchers demonstrate initial steps toward commercial fabrication of carbon nanotubes as a successor to silicon
- IBM scientists have demonstrated a new approach to carbon nanotechnology that opens up the path for commercial fabrication of dramatically smaller, faster and more powerful computer chips. For the first time, more than ten thousand working transistors made of nano-sized tubes of carbon have been precisely placed and tested in a single chip using standard semiconductor processes. These carbon devices are poised to replace and outperform silicon technology allowing further miniaturization of computing components and leading the way for future microelectronics.
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- 2015-04-10 Conductance measurements on graphene nanoribbons tell researchers how molecular wires can be optimised
- The electronics of the future could use molecules to do their arithmetic. The tiny particles could then take over the tasks which are presently done by silicon transistors, for example. Researchers from the Fritz Haber Institute of the Max Planck Society in Berlin have used a nanowire which could potentially conduct current between molecular transistors or different components.
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- 2015-04-10 Next-generation device enabling improved smartphone battery life and high definition in televisions
- A research by Japan's NIMS International Center for Materials Nanoarchitectonics has succeeded in developing a metal oxide film transistor using a material with an unique atomic composition.
Metal oxide film transistors are an object of research and technical development as next-generation materials for amorphous silicon transistors, which are used to switch picture elements (pixels) in the flat panels of existing televisions, computers, smartphones, and similar products. - See Details
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- 2015-04-10 Electronics of nature's nano machines
- A team from the Cardiff University's Schools of Biosciences and Physics and Astronomy have made a breakthrough in our understanding of proteins - the workhorse molecules of the cell and nature's very own nano machines.
The group has successfully detected electric current through a single molecule of a protein, measuring just 5 nanometres long.
Electric current is key in many natural processes including detection of light in the eye, photosynthesis and respiration. - See Details